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1

[IEEE 2019 3rd International Conference on Bio-engineering for Smart Technologies (BioSMART) - Paris, France (2019.4.24-2019.4.26)] 2019 3rd International Conference on Bio-engineering for Smart Technologies (BioSMART) - Automatic recognition system of emotions expressed through the face using machine learning: Application to police interrogation simulation

Ousmane, Abdoul Matine, Djara, Tahirou, Zoumarou W., Faizath Jedida, Vianou, Antoine

Year:

2019

Language:

english

File:

PDF, 153 KB

english, 2019

2

Monitoring PMMA Elimination by Reactive Ion Etching from a Lamellar PS- b -PMMA Thin Film by ex Situ TEM Methods

Farrell, Richard A., Petkov, Nikolay, Shaw, Matthew T., Djara, Vladimir, Holmes, Justin D., Morris, Michael A.

Journal:

Year:

2010

Language:

english

File:

PDF, 2.79 MB

english, 2010

3

Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists

Gangnaik, Anushka, Georgiev, Yordan M., McCarthy, Brendan, Petkov, Nikolay, Djara, Vladimir, Holmes, Justin D.

Journal:

Microelectronic Engineering

Year:

2014

Language:

english

File:

PDF, 1.03 MB

english, 2014

4

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System

Hurley, P. K., O'Connor, Eamon, Djara, V., Monaghan, S., Povey, I. M., Long, R. D., Sheehan, B., Lin, J., McIntyre, P. C., Brennan, B., Wallace, R. M., Pemble, M. E., Cherkaoui, K.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.29 MB

english, 2013

5

Back-gated InGaAs-On-Insulator Lateral N+NN+ MOSFET : Fabrication and Typical Conduction Mechanisms

Park, H.J., Pirro, L., Czornomaz, L., Ionica, I., Bawedin, M., Djara, V., Deshpande, V., Cristoloveanu, S.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.04 MB

english, 2016

6

[IEEE 2019 3rd International Conference on Bio-engineering for Smart Technologies (BioSMART) - Paris, France (2019.4.24-2019.4.26)] 2019 3rd International Conference on Bio-engineering for Smart Technologies (BioSMART) - Automatic recognition system of emotions expressed through the face using machine learning: Application to police interrogation simulation

Ousmane, Abdoul Matine, Djara, Tahirou, Zoumarou W., Faizath Jedida, Vianou, Antoine

Year:

2019

File:

PDF, 153 KB

2019

7

Insights from the Physicochemical and Electrochemical Screening of the Potentiality of the Chemically Synthesized Polyaniline

Djara, Razik, Holade, Yaovi, Merzouki, Abdelhafid, Masquelez, Nathalie, Cot, Didier, Rebiere, Bertrand, Petit, Eddy, Huguet, Patrice, Canaff, Christine, Morisset, Sophie, Napporn, Teko W., Cornu, Davi

Journal:

Journal of The Electrochemical Society

Year:

2020

Language:

english

File:

PDF, 2.46 MB

english, 2020

8

Organic photovoltaic devices: influence of the cell configuration on its performences

J.C. Bernède, H. Derouiche, V. Djara

Journal:

Solar Energy Materials and Solar Cells

Year:

2005

Language:

english

File:

PDF, 334 KB

english, 2005

9

Impact of the energy difference in LUMO and HOMO of the bulk heterojunctions components on the efficiency of organic solar cells

H. Derouiche, V. Djara

Journal:

Solar Energy Materials and Solar Cells

Year:

2007

Language:

english

File:

PDF, 565 KB

english, 2007

10

Effect of the interface morphology on the fill factor of plastic solar cells

V. Djara, J.C. Bernède

Journal:

Thin Solid Films

Year:

2005

Language:

english

File:

PDF, 213 KB

english, 2005

11

On the activation of implanted silicon ions in p -In 0.53 Ga 0.47 As

Djara, V, Cherkaoui, K, Newcomb, S B, Thomas, K, Pelucchi, E, O'Connell, D, Floyd, L, Dimastrodonato, V, Mereni, L O, Hurley, P K

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 915 KB

english, 2012

12

The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications

B. Toomey, K. Cherkaoui, S. Monaghan, V. Djara, É. O’Connor, D. O’Connell, L. Oberbeck, E. Tois, T. Blomberg, S.B. Newcomb, P.K. Hurley

Journal:

Microelectronic Engineering

Year:

2012

Language:

english

File:

PDF, 387 KB

english, 2012

13

NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices

Shayesteh, M., Daunt, C.L.L.M., O'Connell, D., Djara, V., White, M., Long, B., Duffy, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 594 KB

english, 2011

14

Impact of Forming Gas Annealing on the Performance of Surface-Channel MOSFETs With an ALD Gate Dielectric

Djara, V., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, E., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 795 KB

english, 2012

15

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Study of interface and oxide defects in high-k/In0.53Ga0.47As n-MOSFETs

Djara, V., Cherkaoui, K., Schmidt, M., Gomeniuk, Y. Y., O'Connor, E., Povey, I. M., O'Connell, D., Monaghan, S., Pemble, M. E., Hurley, P. K.

Year:

2012

Language:

english

File:

PDF, 367 KB

english, 2012

16

A systematic study of (NH[sub 4])[sub 2]S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al[sub 2]O[sub 3]/In[sub 0.53]Ga[sub 0.47]As/InP system for n-type and p-type In[sub 0.53]Ga[sub 0.47]As epitaxial layers

OâConnor, EÌ., Brennan, B., Djara, V., Cherkaoui, K., Monaghan, S., Newcomb, S. B., Contreras, R., Milojevic, M., Hughes, G., Pemble, M. E., Wallace, R. M., Hurley, P. K.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.83 MB

english, 2011

17

Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly

Farrell, Richard A., Kinahan, Niall T., Hansel, Stefan, Stuen, Karl O., Petkov, Nikolay, Shaw, Matthew T., West, Laetitia E., Djara, Vladimir, Dunne, Robert J., Varona, Olga G., Gleeson, Peter G., Jun

Journal:

Year:

2012

Language:

english

File:

PDF, 962 KB

english, 2012

18

Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs

Negara, M.A., Djara, V., O’Regan, T.P., Cherkaoui, K., Burke, M., Gomeniuk, Y.Y., Schmidt, M., O’Connor, E., Povey, I.M., Quinn, A.J., Hurley, P.K.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.19 MB

english, 2013

19

Electrically active interface defects in the In0.53Ga0.47As MOS system

Djara, V., O’Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O’Connor, É., Povey, I.M., O’Connell, D., Pemble, M.E., Hurley, P.K.

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

20

Fully CMOS-compatible top-down fabrication of sub-50nm silicon nanowire sensing devices

Georgiev, Yordan M., Petkov, Nikolay, McCarthy, Brendan, Yu, Ran, Djara, Vladimir, O’Connell, Dan, Lotty, Olan, Nightingale, Adrian M., Thamsumet, Nuchutha, deMello, John C., Blake, Alan, Das, Samares

Journal:

Microelectronic Engineering

Year:

2014

Language:

english

File:

PDF, 1.70 MB

english, 2014

21

Atomically Flat Low-Resistive Germanide Contacts Formed by Laser Thermal Anneal

Shayesteh, Maryam, Huet, Karim, Toque-Tresonne, Ines, Negru, Razvan, Daunt, Chris L. M., Kelly, Niall, O'Connell, Dan, Yu, Ran, Djara, Vladimir, Carolan, Patrick B., Petkov, Nikolay, Duffy, Ray

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.61 MB

english, 2013

22

$\hbox{TiN/ZrO}_{2}$/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited $\hbox{ZrO}_{2}$ for DRAM Applications

S. Monaghan, K. Cherkaoui, E. O'connor, V. Djara, P. Hurley, L. Oberbeck, E. Tois, L. Wilde, S. Teichert

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 250 KB

english, 2009

23

Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure

Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Monaghan, S., Cherkaoui, K., O'Connor, E., Povey, I., Djara, V., Hurley, P. K.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 160 KB

english, 2013

24

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Capacitance-Voltage and Interface State Density Characteristics of GaAs and In

O'Connor, Eamon, Djara, Vladimir, Monaghan, Scott, Hurley, Paul, Cherkaoui, Karim

Year:

2011

Language:

english

File:

PDF, 1.20 MB

english, 2011

25

[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - Junctionless InGaAs MOSFETs with InAlAs barrier isolation and channel thinning by digital wet etching

Djara, V., Cherkaoui, K., Lopez, T., O'Connor, E., Povey, I. M., Thomas, K. K., Hurley, P. K.

Year:

2013

Language:

english

File:

PDF, 538 KB

english, 2013

26

[IEEE 2011 12th International Conference on Ultimate Integration on Silicon (ULIS) - Cork, Ireland (2011.03.14-2011.03.16)] Ulis 2011 Ultimate Integration on Silicon - Annealing investigations for high-k first n-channel In0.53Ga0.47As MOSFET development

Djara, Vladimir, Cherkaoui, Karim, Thomas, Kevin, Pelucchi, Emanuele, O'Connell, Dan, Floyd, Liam, Hurley, Paul K.

Year:

2011

Language:

english

File:

PDF, 161 KB

english, 2011

27

High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

Burke, Micheal, Blake, Alan, Djara, Vladimir, O'Connell, Dan, Povey, Ian M., Cherkaoui, Karim, Monaghan, Scott, Scully, Jim, Murphy, Richard, Hurley, Paul K., Pemble, Martyn E., Quinn, Aidan J.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2015

Language:

english

File:

PDF, 1.14 MB

english, 2015

28

[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - N-type doped germanium contact resistance extraction and evaluation for advanced devices

Shayesteh, M., Daunt, C. Ll. M., OrConnell, D., Djara, V., White, M., Long, B., Duffy, R.

Year:

2011

Language:

english

File:

PDF, 760 KB

english, 2011

29

Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20 °C

Wieczorek, Andreas, Djara, Vladimir, Peters, Frank H., O’Callaghan, James, Thomas, Kevin, Corbett, Brian

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2012

Language:

english

File:

PDF, 1.90 MB

english, 2012

30

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - (Invited) Investigation of High-κ/In

Cherkaoui, Karim, O'Connor, Eamon, Monaghan, Scott, Long, Rathnait D., Djara, Vladimir, O'Mahony, A., Nagle, R., Pemble, Martyn E., Hurley, Paul K.

Year:

2010

Language:

english

File:

PDF, 483 KB

english, 2010

31

[IEEE 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Bologna, Italy (2015.1.26-2015.1.28)] EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - Tri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors

Djara, V., Czornomaz, L., Daix, N., Caimi, D., Deshpande, V., Uccelli, E., Sousa, M., Marchiori, C., Fompeyrine, J.

Year:

2015

Language:

english

File:

PDF, 1.08 MB

english, 2015

32

(Invited) Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET Characteristics

Cherkaoui, K., Djara, V., O'Connor, E., Lin, J., Negara, M. A., Povey, I. M., Monaghan, S., Hurley, P. K.

Journal:

ECS Transactions

Year:

2012

Language:

english

File:

PDF, 378 KB

english, 2012

33

(Invited) Wafer Bonding: An Integration Route for Hybrid III-V/SiGe CMOS on 300mm

Czornomaz, L., Daix, N., Uccelli, E., Djara, V., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J.-M., Fompeyrine, J.

Journal:

ECS Transactions

Year:

2014

Language:

english

File:

PDF, 1.65 MB

english, 2014

34

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - (Invited) Equivalent Oxide Thickness Correction in the High-k/In

Hurley, Paul K., Long, Rathnait, O'Regan, Terrance, O'Connor, Eamon, Monaghan, Scott, Djara, Vladimir, Negara, M. Adi, O'Mahony, Aileen, Povey, Ian, Blake, Alan, Nagle, Roger, O'Connell, Dan, Pemble,

Year:

2010

Language:

english

File:

PDF, 430 KB

english, 2010

35

Resist–substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography

Hobbs, Richard G., Schmidt, Michael, Bolger, Ciara T., Georgiev, Yordan M., Fleming, Peter, Morris, Michael A., Petkov, Nikolay, Holmes, Justin D., Xiu, Faxian, Wang, Kang L., Djara, Vladimir, Yu, Ran

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2012

Language:

english

File:

PDF, 1.51 MB

english, 2012

36

'Desa SIAGA', the 'Alert Village': the evolution of an iconic brand in Indonesian public health strategies

Hill, P. S., Goeman, L., Sofiarini, R., Djara, M. M.

Journal:

Health Policy and Planning

Year:

2014

Language:

english

File:

PDF, 449 KB

english, 2014

37

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al

O'Mahony, Aileen, Monaghan, Scott, Chiodo, Rosario, Povey, Ian, Cherkaoui, Karim, Nagle, Roger, O'Connor, Eamon, Long, Rathnait, Djara, Vladimir, O'Connell, Dan, Crupi, Felice, Pemble, Martyn, Hurley,

Year:

2010

Language:

english

File:

PDF, 2.12 MB

english, 2010

38

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Germanium Fin Structure Optimization for Future MugFET and FinFET Applications

Shayesteh, Maryam, Duffy, Ray, McCarthy, Brendan, Blake, Alan, White, Mary, Scully, Jim, Yu, Ran, Djara, Vladimir, Schmidt, Michael, Petkov, Nikolay, Kelleher, Anne-Marie

Year:

2011

Language:

english

File:

PDF, 2.52 MB

english, 2011

39

[IEEE 2015 Symposium on VLSI Technology - Kyoto, Japan (2015.6.16-2015.6.18)] 2015 Symposium on VLSI Technology (VLSI Technology) - Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates

Czornomaz, L., Uccelli, E., Sousa, M., Deshpande, V., Djara, V., Caimi, D., Rossell, M. D., Erni, R., Fompeyrine, J.

Year:

2015

Language:

english

File:

PDF, 1.27 MB

english, 2015

40

An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch

V. Djara, V. Deshpande, E. Uccelli, N. Daix, D. Caimi, C. Rossel, M. Sousa, H. Siegwart, C. Marchiori, J. Hartmann, K. Shiu, C. Weng, M. Krishnan, M. Lofaro, R. Steiner, D. Sadana, D. Lubyshev, A. Liu

Year:

2015

Language:

english

File:

PDF, 1.76 MB

english, 2015

41

Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

Djara, Vladimir, Czornomaz, Lukas, Deshpande, Veeresh, Daix, Nicolas, Uccelli, Emanuele, Caimi, Daniele, Sousa, Marilyne, Fompeyrine, Jean

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.83 MB

english, 2015

42

CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION = 156 µA/µm at VDD = 0.5 V and IOFF = 100 nA/µm

Djara, Vladimir, Deshpande, Veeresh, Sousa, Marilyne, Caimi, Daniele, Czornomaz, Lukas, Fompeyrine, Jean

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 920 KB

english, 2016

43

(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology

Deshpande, V. V., Djara, V., Caimi, D., O'Connor, E., Sousa, M., Czornomaz, L., Fompeyrine, J.

Journal:

ECS Transactions

Year:

2015

Language:

english

File:

PDF, 1.20 MB

english, 2015

44

Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Djara, Vladimir, Sousa, Marilyne, Dordevic, Nikola, Czornomaz, Lukas, Deshpande, Veeresh, Marchiori, Chiara, Uccelli, Emanuele, Caimi, Daniele, Rossel, Christophe, Fompeyrine, Jean

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.07 MB

english, 2015

45

[IEEE 2014 Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2014.6.8-2014.6.9)] 2014 Silicon Nanoelectronics Workshop (SNW) - Hybrid III-V/SiGe technology: Improved n-FET performance and CMOS inverter characteristics

Czornomaz, Lukas, Daix, Nicolas, Caimi, Daniele, Djara, Vladimir, Uccelli, Emanuele, Rossel, Christophe, Marchiori, Chiara, Sousa, Marilyne, Fompeyrine, Jean

Year:

2014

Language:

english

File:

PDF, 1.49 MB

english, 2014

46

[IEEE 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Wien, Vienna, Austria (2016.1.25-2016.1.27)] 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration

Deshpande, V., Djara, V., O'Connor, E., Caimi, D., Sousa, M., Czornomaz, L., Fompeyrine, J., Hashemi, P., Balakrishnan, K.

Year:

2016

Language:

english

File:

PDF, 425 KB

english, 2016

47

[IEEE 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Wien, Vienna, Austria (2016.1.25-2016.1.27)] 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Fabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structures

Czornomaz, L., Djara, V., Deshpande, V., Caimi, D., Pirro, L., Cristoloveanu, S., Fompeyrine, J.

Year:

2016

Language:

english

File:

PDF, 1024 KB

english, 2016

48

[IEEE 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Wien, Vienna, Austria (2016.1.25-2016.1.27)] 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Volume and interface conduction in InGaAs junctionless transistors

Pirro, L., Park, H. J., Ionica, I., Bawedin, M., Cristoloveanu, S., Czornomaz, L., Djara, V., Deshpande, V.

Year:

2016

Language:

english

File:

PDF, 483 KB

english, 2016

49

Laser thermal anneal formation of atomically-flat low-resistive germanide contacts

Huet, K., Shayesteh, M., Toqué-Tresonne, I., Negru, R., Daunt, C. L. M., Kelly, N., O'Connell, D., Yu, R., Djara, V., Carolan, P., Petkov, N., Duffy, R.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 937 KB

english, 2014

50

[IEEE 2016 74th Annual Device Research Conference (DRC) - Newark, DE, USA (2016.6.19-2016.6.22)] 2016 74th Annual Device Research Conference (DRC) - Theoretical and experimental analysis of capacitance and mobility in InGaAs

Bufler, F. M., Frey, M., Erlebach, A., Deshpande, V., Czornomaz, L., Djara, V., O'Connor, E., Caimi, D., Fompeyrine, J.

Year:

2016

Language:

english

File:

PDF, 196 KB

english, 2016